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发明名称
METHOD FOR DETECTING TDDB FAILURE OF MOS TRANSISTOR DESIGNED IN CIRCUIT
摘要
申请公布号
KR20060091025(A)
申请公布日期
2006.08.17
申请号
KR20050011739
申请日期
2005.02.12
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YANG, GI YOUNG
分类号
H01L21/66
主分类号
H01L21/66
代理机构
代理人
主权项
地址
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