Susceptor and vapor growth device

摘要

A susceptor ( 2 ) in which a semiconductor substrate (W) is supported approximately horizontally in a pocket ( 2 c) when performing a vapor phase growth of a single crystal thin film on a front surface of the semiconductor substrate (W), and in which the pocket ( 2 c) comprises an outer peripheral pocket portion ( 20 ) to support the semiconductor substrate (W) and a central side pocket portion ( 21 ) which is formed inside the outer peripheral side pocket portion ( 20 ) to be concave from the outer peripheral side pocket portion ( 20 ), wherein the outer peripheral side pocket portion ( 20 ) comprises a substrate supporting surface ( 20 a) which is inclined with respect to a horizontal surface to be lowered toward a central side from an outer peripheral side of the pocket ( 2 c), and a region of the substrate supporting surface ( 20 a) excluding at least an inner peripheral edge supports a portion of a rear surface of the semiconductor substrate (W) which is inside an outer peripheral edge of the semiconductor substrate (W).