发明名称 Layered films formed by controlled phase segregation
摘要 Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
申请公布号 US2006183348(A1) 申请公布日期 2006.08.17
申请号 US20050060843 申请日期 2005.02.17
申请人 MEAGLEY ROBERT P;LEESON MICHAEL J;GOODNER MICHAEL D;LEET BOB E;MCSWINEY MICHAEL L;CLARK SHAN C 发明人 MEAGLEY ROBERT P.;LEESON MICHAEL J.;GOODNER MICHAEL D.;LEET BOB E.;MCSWINEY MICHAEL L.;CLARK SHAN C.
分类号 H01L21/31 主分类号 H01L21/31
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