发明名称 |
Metal gate carbon nanotube transistor |
摘要 |
A top metal gate carbon nanotube transistor may be provided which has acceptable electrical characteristics. The transistor may be formed over a structure including a semiconductor substrate made of an epitaxial layer and covered with an insulating layer. The carbon nanotubes may be deposited thereover, source and drains defined, and a metal gate electrode applied over a high dielectric constant gate dielectric. The processing may be such that the carbon nanotubes are protected from high temperature processing and excessively oxidizing atmospheres.
|
申请公布号 |
US2006180859(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20050059184 |
申请日期 |
2005.02.16 |
申请人 |
RADOSAVLJEVIC MARKO;MAJUMDAR AMLAN;DATTA SUMAN;KAVALIEROS JACK;DOYLE BRIAN S;BRASK JUSTIN K;CHAU ROBERT S |
发明人 |
RADOSAVLJEVIC MARKO;MAJUMDAR AMLAN;DATTA SUMAN;KAVALIEROS JACK;DOYLE BRIAN S.;BRASK JUSTIN K.;CHAU ROBERT S. |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|