发明名称 THIN FILM PIEZOELECTRIC RESONATOR AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin film piezoelectric resonator which can improve crystallinity of a thin film piezoelectric body and facilitates micromachining, and a thin film piezoelectric resonator whose frequency can be made high and which can be made small-sized. <P>SOLUTION: The manufacturing method for the thin film piezoelectric resonator 1 includes the steps of: forming a 1st electrode layer on a substrate 2; forming a 1st piezoelectric body layer on the 1st electrode layer; forming a 1st piezoelectric body 61 by patterning the 1st piezoelectric layer and forming a 1st electrode 5 by patterning the 1st electrode layer; cleaning the surface of the piezoelectric body 61; forming a 2nd piezoelectric body 63 on the cleaned surface of the 1st piezoelectric body 61 to form a piezoelectric body 6; and forming a 2nd electrode 82 on the piezoelectric body 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006217188(A) 申请公布日期 2006.08.17
申请号 JP20050027085 申请日期 2005.02.02
申请人 TOSHIBA CORP 发明人 YANASE NAOKO;SANO KENYA;YASUMOTO YASUAKI;OHARA RYOICHI;ITAYA KAZUHIKO;KAWAKUBO TAKASHI
分类号 H03H3/02;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/319;H03H9/17 主分类号 H03H3/02
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