| 摘要 |
The present invention relates to thin-film solar cells of the CIGS-type. A characteristic feature of the invention is the use of two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer ( 7 ) on top of the CIGS-layer ( 3 ) and a second ALD ZnO-buffer layer ( 8 ) on top of the first ( 7 ) buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The invention also relates to a method of producing the cell and a process line for manufacturing of the cell structure.
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