Integrated semiconductor memory e.g. dynamic random access memory, has electrolytic memory cells whose thickness sequence is oriented in memory cell planes, where ohmic resistance of sequence is reduced by applying programming current

摘要

The memory has solid body electrolytic memory cells (5) whose thickness sequence (8) exhibits solid body electrolytes (6) and a metalliferous layer (7). The ohmic resistance of the sequence is reduced by applying a programming current. Strip conductors (11, 12) are prestressed with a partial voltage in each case, where sum of voltages results in a necessary program voltage. The sequence is oriented in memory cell planes (15, 25, 35).