| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating an inexpensive high output semiconductor light emitting element by preventing As remaining in a growth furnace during growth of a light reflecting layer from being mixed into an n-type clad layer under growth thereby improving crystallinity of an active layer. <P>SOLUTION: A plurality of pairs of a low refractive index film and a high refractive index film are laid in layers on an n-type semiconductor substrate 1 to form an n-type light reflecting layer 3, a light emitting portion comprising an n-type clad layer 4, an active layer 5 and a p-type clad layer 6 is formed on the n-type light reflecting layer, and a p-type current dispersion layer is formed thereon. In such a process for fabricating a group III-V semiconductor light emitting element, a material containing As is employed in both low refractive index film and high refractive index film constituting the n-type light reflecting layer 3, and growth temperature of the n-type light reflecting layer 3 is set lower than that of the light emitting portions 4, 5, 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
