| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which enables high speed operation by reducing the inductance of wiring, and progresses miniaturization, in the inter-chip connection of the semiconductor device having a plurality of semiconductor chips inside. <P>SOLUTION: A first semiconductor chip 31 equipped with a first MIS transistor of a first conductivity type in which a source electrode (S) is formed on a first face, is opposed to a second semiconductor chip 32 equipped with a second MIS transistor of the first conductivity type in which a drain electrode (D) is formed on the first face. Each electrode is joined to a lead frame 30 interposed between the source electrode (S) and the drain electrode (D). The high speed operation is enabled by reducing the inductance of the wiring, and the miniaturization is progressed by laying the semiconductor chip in the longitudinal direction. The chips may be directly joined together without using the lead frame. The semiconductor device is sealed by a resin sealing body, and a heat sink can also be attached there. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
