| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device in which photoelectric conversion efficiency of a unit pixel is enhanced while improving the characteristics of flake, and the like, and to provide its fabrication process. <P>SOLUTION: In the process for forming a photodiode PD becoming a photoelectric conversion part, a charge storage region 27 of the photodiode PD is formed by ion implantation in a p-type semiconductor well region 22 surrounded by a first isolation diffusion region 24 and a second isolation diffusion region 25, and after impurity ions are also implanted in the projecting region 24A of the first isolation diffusion region 24, an n-type charge storage region 27 is formed by thermal diffusion such that the outer circumferential part thereof abuts against or approaches the second isolation diffusion region 25 beneath the projecting region 24A. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
