发明名称 FLASH MEMORY DEVICE INCLUDING FUSE CELL ARRAY REALIZED WITH FLASH CELL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory device including a plurality of fusing circuits realized with flash fuse cells, and to provide a method for composing the flash memory device capable of sensing and fusing a plurality of peripheral circuits simultaneously. <P>SOLUTION: The fuses of the flash memory device are composed of flash cells. The flash cell array is composed of a plurality of flash memory cells. A 1st fusing circuit is composed of the flash cells sharing a bit line with the flash cell array, and controls the connection between the flash array and an external logic circuit. A 2nd fusing circuit is composed of the flash cells sharing the bit line, and changes an address of a defective cell to that of a redundancy cell. A 3rd fusing circuit is composed of the flash cells sharing the bit line, and adjusts a DC voltage level for adjusting a reference value at the time of manufacturing the flash memory device. A fuse sense amplifier is connected to the bit line, and reads and outputs a data of the bit line. The 1st fusing circuit, the 2nd fusing circuit, and the 3rd fusing circuit are realized with the flash cells. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006216219(A) 申请公布日期 2006.08.17
申请号 JP20060011517 申请日期 2006.01.19
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM TAE-SUNG;KIN KEIO
分类号 G11C16/02;G11C16/06 主分类号 G11C16/02
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