发明名称 STRESS SENSOR
摘要 PROBLEM TO BE SOLVED: To improve a stress sensor provided with a thick film resistance arranged on a ceramic diaphragm so as to increase a gauge rate or K-factor so that a signal satisfactorily processible by an after-connected electronic circuit can be produced. SOLUTION: A dielectric layer is provided between the ceramic diaphragm (support) and the thick film resistance and thick film conductor path. According to this, a mixed layer of both the materials of the thick film resistance and the dielectric layer is formed between the both, and the K-factor as pressure sensing resistance is remarkably enhanced. The excessive thinning of the diaphragm is dispensed with, and the stress sensor can be easily manufactured. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006215032(A) 申请公布日期 2006.08.17
申请号 JP20060024985 申请日期 2006.02.01
申请人 SIEMENS AG 发明人 MATTMANN ERICH;WEBER KLAUS
分类号 G01L1/22 主分类号 G01L1/22
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