发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To ensure the uniformity of substrate processing by effectively controlling pressure distribution on a substrate at the time of substrate processing in a substrate processing apparatus of type of discharging gases from the side opposite to a gas supplying side with the substrate sandwiched while supplying a gas from the side of the substrate. SOLUTION: The substrate 8 is supported by a susceptor (holder) 3 in a processing chamber 1. Gas supplying ports 19, 20 are configured so as to be provided on the side part of the substrate 8 and the upper part of the substrate 8, and supply the gas to the substrate 8 from the upper part of the substrate 8. A discharging port 16 for discharging the gas inside the processing chamber 1 is provided on the part opposite to the gas supply ports 19, 20 with the substrate 8 sandwiched and lower than the substrate 8. An upper inner wall surface 26a of an upper container 26 of the processing chamber 1 opposing the substrate 8 is configured so as to incline to the substrate 8. The inclination of the wall surface 26a is set so that an opposing distance with the wall surface 26a opposing the substrate 8 may be high from the upstream side of gas flow toward the downstream side thereof. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006216597(A) 申请公布日期 2006.08.17
申请号 JP20050025121 申请日期 2005.02.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ITAYA HIDEJI;NOUCHI HIDEHIRO
分类号 H01L21/31 主分类号 H01L21/31
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