METHOD OF FORMING SILICON NANOPARTICLES FROM SILICON RICH-OXIDE BY DC REACTIVE SPUTTERING FOR ELECTROLUMINESCENCE APPLICATION

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method to make a silicon rich-oxide EL device enabling dopant with high light emission efficiency and at low cost. SOLUTION: The method 10 of forming a silicon-rich silicon oxide layer having nanometer sized silicon particles therein includes a step 12 of preparing a substrate, a step 14 of preparing a target, a step 16 of placing the substrate and the target in a sputtering chamber, a step 18 of setting the sputtering chamber parameters, a step 20 of depositing material from the target onto the substrate to form a silicon-rich silicon oxide layer, and a step 22 of annealing the substrate to form nanometer sized silicon particles therein. COPYRIGHT: (C)2006,JPO&NCIPI