发明名称 |
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND MANUFACTURING METHOD THEREOF |
摘要 |
A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
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申请公布号 |
US2006183295(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20050162725 |
申请日期 |
2005.09.21 |
申请人 |
HUANG MIN-SAN;HSU HANN-JYE;YAO YUNG-CHUNG |
发明人 |
HUANG MIN-SAN;HSU HANN-JYE;YAO YUNG-CHUNG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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地址 |
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