| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystalline wafer for a semiconductor laser wherein an accuracy and a process yield are increased when mask pattern alignment is carried out in an optical alignment system with use of a cleavage plane as a reference. SOLUTION: A surface of a wafer 5 having an orientation flat formed by cleavage is polished using a polishing cloth 8 having a high hardness at a suitable wafer pushing pressure and at a suitable polishing rate, so that the polishing rate of the central part of the wafer surface is the same as that of the outer periphery thereof. Consequently, there is obtained a single crystalline wafer for a semiconductor laser which comprises an orientation flat part having a small ridge line sag of 40μm or less in a cleavage plane 4. COPYRIGHT: (C)2006,JPO&NCIPI
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