RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a resistance element having a temperature dependency coefficient of resistivity that is smaller than that of resistivity that a semiconductor material for composing the resistance element has. SOLUTION: The resistance element 10 has n-type polycrystalline silicon 11 and p-type polycrystalline silicon 12. The n-type polycrystalline silicon 11 has a positive temperature dependency coefficient of resistivity, while the p-type polycrystalline silicon 12 has a negative one. Silicides 13, 14 are formed at both the ends of one main surface 11A of the n-type polycrystalline silicon 11, and silicides 17, 18 are formed at both the ends of one main surface 12A of the p-type polycrystalline silicon 12. The n-type polycrystalline silicon 11 is connected in series with the p-type polycrystalline silicon 12 via the silicide 14, a contact 16, a metal layer 23, a contact 19, and the silicide 17. COPYRIGHT: (C)2006,JPO&NCIPI