发明名称 |
Salicide process for image sensor |
摘要 |
A self-aligned silicide (salicide) process is used to form a metal salicide for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An insulator layer is deposited over the pixel array of the image sensor. Portions of the insulator layer are removed using a photoresist mask and a metal layer is deposited. The photoresist mask protects the photosensitive regions of the image sensor. The metal layer is annealed to form a metal silicide.
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申请公布号 |
US2006183268(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20050058117 |
申请日期 |
2005.02.14 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
RHODES HOWARD E. |
分类号 |
H01L21/00;H01L21/44 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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