| 摘要 |
The invention relates to a method of forming a shallow junction. The method ( 100 ) comprises forming source/drain extension regions with a non-amorphizing tail implant ( 105 ) which is annealed conventionally (spike/RTP) and amorphizing implant which is re-grown epitaxially (SPER) ( 110 ). The non-amorphizing tail implant is generally annealed ( 106 ) before a doped amorphous layer for SPE is formed ( 107 ). SPE provides a high active dopant concentration in a shallow layer. The non-amorphizing tail implant ( 105 ) expands the source/drain extension region beyond the range dictated by the SPE-formed layer and keeps the depletion region of the P-N junction away from where end-of-range defects form during the SPE process. Thus, the SPE-formed layer primarily determines the conductivity of the junction while the tail implant determines the location of the depletion region. End-of-range defects form, but are not in a position to cause significant reverse bias leakage.
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