MEMORY DEVICE COMPRISING SILICON RICH SILICON OXIDE LAYER AND METHOD OF MANUFACTURING FOR THE SAME

摘要

A memory device with a silicon rich oxide layer and a method of manufacturing the same are provided. The memory device with a silicon rich oxide layer may include a semiconductor substrate, source/drain regions formed on the semiconductor substrate, and a gate structure formed on the semiconductor substrate. The gate structure may contact with the source/drain regions and may include a silicon oxide layer with a silicon content greater than that of a silicon oxide layer (SiO₂).