| 摘要 |
A single crystal layer of silicon is produced on a silicon substrate by means of the reversible reaction Si (solid) +SiX4 (vapour) = 2 SiX2 (vapour) where X is a halogen, which includes the steps of placing the silicon substrate in a first temperature controlled region, placing a quantity of silicon to be deposited on said substrate in a second substantially independently temperature-controlled region which communicates with said first region, raising the temperature of said first region to a predetermined temperature passing a vapour of a silicon tetrahalide therethrough, said temperature and said vapour being so chosen as to cleanse the surface of said silicon substrate, and subsequently regulating the relative temperatures of said first and second region so that the temperature of the latter region becomes greater than that of the former so that deposition of said elemental silicon occurs on said substrate. In an example the tetrahalide is SiCl4 and the first region is heated to 1300 DEG C. and the second to 1100 DEG C. to cleanse the substrate. The temperatures are then adjusted to 1100 DEG C. and 1300 DEG C., respectively, for the deposition of silicon. Reference has been directed by the Comptroller to Specification 754,554. |
