| 摘要 |
A MEMS device includes a wiring laminated through an interlayer insulating film on a semiconductor substrate, the interlayer insulating film partially opened up to an upper portion of the substrate, and a structure disposed in the opening, wherein on a sidewall of the interlayer insulating film exposed in the opening that faces the structure and on a surface of the uppermost layer of the interlayer insulating film, a silicon nitride film is formed.
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