发明名称 Silicon nano wire having a silicon-nitride shell and method of manufacturing the same
摘要 Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.
申请公布号 US2006182966(A1) 申请公布日期 2006.08.17
申请号 US20060349250 申请日期 2006.02.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE EUN-KYUNG;CHOI BYOUNG-IYONG
分类号 D02G3/00 主分类号 D02G3/00
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