发明名称 |
Silicon nano wire having a silicon-nitride shell and method of manufacturing the same |
摘要 |
Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.
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申请公布号 |
US2006182966(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20060349250 |
申请日期 |
2006.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE EUN-KYUNG;CHOI BYOUNG-IYONG |
分类号 |
D02G3/00 |
主分类号 |
D02G3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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