发明名称 Semiconductor device and production method thereof
摘要 In a semiconductor device, a spacer layer is formed around an imaging element on a semiconductor substrate and a glass lid is combined to the spacer layer via an adhesive layer. A space is made between the semiconductor substrate and the glass lid so as to be positioned at a region where the imaging element is disposed. As a result, in forming a hollow section between a light transmitting material and an active element on the semiconductor substrate, it is unnecessary to apply a large load and to superimpose patterns when the light transmitting material is combined to the semiconductor substrate.
申请公布号 US2006180887(A1) 申请公布日期 2006.08.17
申请号 US20060352292 申请日期 2006.02.13
申请人 SHARP KABUSHIKI KAISHA 发明人 ONO ATSUSHI
分类号 H01L31/0232;H01L27/14;H04N5/335;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L31/0232
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