| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the destructions of its holding data caused by soft errors are generated hardly. <P>SOLUTION: In the semiconductor device, no silicide layer is disposed on the top surfaces of diffusion layers 33a connected with connecting nodes M1, M2 of transistors P1, D1, P2, D2 for holding data, but silicide layers are disposed on the top surfaces of diffusion layers 33 other than the diffusion layers 33a. Consequently, the resistances of the diffusion layers 33a can be so increased as to be able to suppress the flows of their currents based on the charges caused by incident cosmic rays and prevent the occurrence of soft errors. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
