| 发明名称 |
ANTI-FUSE CIRCUIT WITH IMPROVED RELIABILITY AND ANTI-FUSING METHOD EMPLOYING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an anti-fusing method for utilizing an anti-fuse circuit with improved reliability. <P>SOLUTION: The anti-fuse circuit is provided with: an anti-fuse element formed into a MOS structure; and an electric field control section that is driven to separately control forming of electric fields applied to first and second junctions of the anti-fuse element. Since the anti-fuse circuit and the anti-fusing method separately control the formation of the electric fields applied to the first and second junctions of the anti-fuse element, insulation breakdown can be caused at both two points of the anti-fuse element. Thus, the reliability of the anti-fuse circuit is much more enhanced than that of anti-fuse circuits of prior arts. Further, a gate terminal of the anti-fuse element is formed in a belt-like closed circuit, the insulation breakdown of the gate terminal can easily be caused. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2006216954(A) |
申请公布日期 |
2006.08.17 |
| 申请号 |
JP20060024797 |
申请日期 |
2006.02.01 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
YOU HYUNG SIK;CHOI SEOUK KYU;RI SHOGEN;LEE HYUN SEOK |
| 分类号 |
H01L21/82;H01L21/822;H01L21/8234;H01L27/04;H01L27/088 |
主分类号 |
H01L21/82 |
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