MANUFACTURING METHOD OF SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer which can improve surface roughness without disturbing crystal integrity even by treatment of sacrificial oxidation in a smart cutting method. SOLUTION: In the method after an ion implantation layer is formed by ion implantation of hydrogen ion or rare gas to an active layer wafer via an insulating film, the active layer wafer is laminated with a supporting wafer via the insulating film and the ion implantation layer is peeled by performing heat treatment for the formed laminated wafer, and thereby, the SOI wafer is formed with an SOI layer formed on a buried oxide film. A wafer doped with carbon (C) is used in a growth process of single crystalline ingot as the active layer wafer. It is preferable that the carbon concentration is at least 1×1016atoms/cm3. COPYRIGHT: (C)2006,JPO&NCIPI