| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of SiP formation in which noise acting between chips is suppressed when two or more semiconductor chips are stacked integrally. <P>SOLUTION: In the semiconductor device packaged while including a semiconductor, a noise shielding layer SDa or a noise shielding layer consisting of a meshed conductive layer is formed in a predetermined region of the upper layer of a first semiconductor chip 12 including an active element to cover the entire surface of that region, and a second semiconductor chip 16 including an active element is stacked on the upper layer of the noise shielding layer SDa. Alternatively, a noise shielding layer may be provided between a substrate 10 and the first semiconductor chip 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
