| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a multilayer buried-wiring structure capable of also improving a wiring performance without generating a nonconformity such as the lowering of a throughput, a film peeling and a deformation or the like during a manufacturing process. SOLUTION: In the semiconductor device having a multilayer-wiring structure, a plurality of layers of wiring layers 20-1, 20-2, ... with buried wirings 26a, in which wiring trenches (a) formed on the surface sides of interlayer insulating films and the insides of connecting holes (b) formed to the bottoms of the wiring trenches (a) are buried with a conductive material, and vias 26b are laminated to the upper section of a substrate. In such a semiconductor device, each interlayer insulating film is constituted so that the strengths of the mechanical strengths of the interlayer insulating films configuring a plurality of the wiring layers 20-1, 20-2, ... are alternated at every wiring layer 20-1, 20-2, ... in the laminating direction of the wiring layers 20-1, 20-2, .... COPYRIGHT: (C)2006,JPO&NCIPI |
