METHOD AND DEVICE FOR THE INDEPENDENT EXTRACTION OF CARRIER CONCENTRATION LEVEL AND ELECTRICAL JUNCTION DEPTH IN A SEMICONDUCTOR SUBSTRATE FROM A SINGLE MEASUREMENT

摘要

The present invention provides a method and device for determining, in a non-destructive way, carrier concentration level and junction depth in a semiconductor substrate, independent from each other, during a single measurement. In an example of Carrier Illumination TM (CI) technique, the method according to this invention is based on the systematic correlation of the pump power laser setting at which an inflection point occurs in the CI power curves with respect to the involved carrier concentration levels and junction depths. When other techniques than the CI technique are used, it is the inflection point in the characteristic parameter of the respective technique versus pump laser power which is used in the method according to the present invention.