PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

There is provided a process comprising the steps of forming insulating film (12) on semiconductor substrate (10) having a first region and a second region; forming insulating film (14) of an oxide material containing aluminum on the insulating film (12); carrying out a selective ion implantation of inactive ions in the insulating film (14) of the first region; and selectively removing the insulating film (14) of the first region through wet etching. In this process, the insulating film (14) can be removed with high selection ratio relative to the foundation semiconductor substrate (10), and damage introduction in the semiconductor substrate (10) by the removal of the insulating film (14) can be reduced.