| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein it is difficult to enhance dimensional accuracy of each wiring line in the case when wiring lines of different widths are proximately formed. SOLUTION: A first insulating film 2, a first conductive film 3, a third insulating film 4, second conductive films 5, 6, and a second insulating film 7 are sequentially formed on a semiconductor substrate 1. A first resist having a first width that corresponds to the width of the gate of a memory cell is formed periodically with first intervals on the second insulating film, and at least the second insulating film 7 is patterned using the first resist to form a mask pattern containing the second insulating film. A second resist 9 is selectively formed at spaces of the mask pattern in the forming regions of select gates each having a width wider than that of the gate of the memory cell, and the first conductive film is patterned using the second resist and the mask pattern. COPYRIGHT: (C)2006,JPO&NCIPI
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