| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-bit magnetic memory element using spin polarization currents and its manufacture and a driving method. SOLUTION: This magnetic memory element is provided with a switching element and a magnetic storage node connected to the switching element. The magnetic storage node is provided with vertically isolated first magnetic film, second magnetic film and free magnetic film. In the first and second magnetic films, their magnetic polarization directions and transparent properties for spin-polarized electrons are opposite to each other. A free magnetic film is provided with isolated first and second free magnetic films, and isolated third and fourth magnetic films are arranged between the first free magnetic film and the second free magnetic film so that the magnetic polarization directions and transparent properties for the spin polarized electrons are opposite to each other. COPYRIGHT: (C)2006,JPO&NCIPI
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