发明名称 Method of fabricating CMOS image sensor
摘要 A method of fabricating an image sensor includes the steps of sequentially stacking a metal layer and a nitride layer over a semiconductor substrate divided into an active area and a pad area; forming a metal pad on the pad area by selectively patterning the nitride layer and the metal layer; forming a protecting layer over the semiconductor substrate including the metal pad, forming a pad opening over the metal pad by selectively removing the protecting layer until a surface of the nitride layer is exposed; forming a color filter layer over the active area of the semiconductor substrate; forming a microlens over the color filter layer; and selectively removing the nitride layer exposed via the pad opening.
申请公布号 US2006183266(A1) 申请公布日期 2006.08.17
申请号 US20050320739 申请日期 2005.12.30
申请人 HAN CHANG H 发明人 HAN CHANG H.
分类号 H01L21/00;H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L21/00
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