发明名称 |
Multiple gate field effect transistor structure |
摘要 |
A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said sidewall portions comprising major inner and outer surfaces and an upper surface; wherein, each of said surfaces comprises a surface for forming an overlying field effect transistor (FET).
|
申请公布号 |
US2006180854(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20050057423 |
申请日期 |
2005.02.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSU JU-WANG;SHIEH JYU-HORNG;TAO HUN-JAN;CHANG CHANG-YUN;XUAN ZHONG T.;LIU SHENG-DA |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|