| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a resist pattern having a halftone pattern portion is formed using a photosensitive resist composition so that excellent residual film thickness exposure margin and dry etching resistance of the halftone pattern portion are ensured. <P>SOLUTION: The resist pattern forming method includes steps of: (a) forming a resist film on a substrate by applying the photosensitive resist composition comprising (A) an alkali-soluble resin, (B) a quinonediazido group-containing compound, (C) a solvent and (D) a phenolic compound; (b) exposing the resist film through a mask in which a halftone portion is present; and (c) developing the exposed resist film by bringing a developer into contact with the film, wherein a condensate of phenols and dicyclopentadiene is used as the phenolic compound (D). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
