| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that a chemical substance in a photo resist layer diffuses into an immersion liquid and a T-shaped end is produced in photo resist pattern after being developed, and to provide an immersion lithography process to improve the level of analysis of the process. <P>SOLUTION: In the immersion lithography process, the photo resist layer is formed on a material layer, and an acid compensating layer is formed on the photo resist layer. An immersion exposure process is performed for the acid compensating layer and the photo resist layer. After the immersion exposure process is performed, the concentration of photoacid in the acid compensating layer generated by the photoacid generator included in the acid compensating layer is higher than the concentration of photoacid in the photo resist layer generated by the photoacid generator included in the photo resist layer. Subsequently, a development process is performed for the acid compensating layer and the photo resist layer, and patterning of the acid compensating layer and the photo resist layer is performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
