| 摘要 |
A reflective electrode and a compound semiconductor light emitting device including the same are provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device including an n-type compound semiconductor layer, an active layer, and the p-type compound semiconductor layer, has an ohmic contact layer formed at a portion of the upper surface of the p-type compound semiconductor layer in a predetermined width, and a reflective electrode layer covering the ohmic contact layer and a portion of the upper surface of the p-type compound semiconductor layer not covered by the ohmic contact layer, wherein contact areas for directly contacting the reflective electrode layer and the p-type compound semiconductor layer are arranged on the upper surface of the p-type compound semiconductor layer.
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