METHOD OF FORMING STI REGIONS IN ELECTRONIC DEVICES
摘要
<p>The invention relates to a method of manufacturing integrated circuits and in particular to the step of forming shallow trench isolation (STI) zones. The method according to the present invention leads to electronic devices and to integrated circuits having reduced narrow width effect and edge leakage. This is achieved by performing an extra implantation step near the edge of the STI zone, after formation of the STI zones.</p>
申请公布号
WO2006085245(A1)
申请公布日期
2006.08.17
申请号
WO2006IB50343
申请日期
2006.02.01
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;DUBOIS, JEROME;BOTER, JOHAN, D.