| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for fabricating a photoelectric converter in which film deposition rate of a power generation layer can be enhanced while sustaining conversion efficiency of a photoelectric converter being fabricated. <P>SOLUTION: The photoelectric converter 1 is fabricated using a plasma CVD system 10 where a discharge electrode 12 and a ground electrode 13 are disposed oppositely in a chamber 11. The fabrication process comprises (A) a step for disposing a substrate 20 on the ground electrode 13 to oppose the discharge electrode 12, (B) a step for setting the distance between the substrate 20 and the discharge electrode 12 not longer than 8 mm, (C) a step for supplying material gas 21 into the chamber 11, (D) a step for setting the pressure in the chamber 11 at 600 Pa or above, and (E) a step for depositing the film of an i-layer 5, i. e. a power generation layer for the substrate 20, by supplying high frequency power to the discharge electrode 12 and generating plasma of the material gas 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
