| 摘要 |
A process for forming thin films of an insulating material on a substrate comprises vapour depositing a first layer of insulating material under vacuum, raising the pressure contacting the deposited layer and then vapour depositing a second layer of insulating material under vacuum. The second layer may be the same as the first. The pressure is preferably raised by admitting dry nitrogen or dry helium into the vacuum chamber. The deposition of layers of SiO, SiO2, CaF2, Al2O3, BeO and MgF2 on metallic bases such as Ta or Cu is referred to. |
