| 摘要 |
The invention provides a process for preparing a metal film on a substrate, comprising the steps of: (a) depositing a film of a metal oxide on a substrate by means of a gas phase deposition process, which metal is selected from the group consisting of Mo, V, W, Pd, Ru, Ta, Nb and Cr; and (b) reducing the metal oxide on the substrate into the corresponding metal by contacting the film of the metal oxide with a reducing gas at a temperature in the range of from 300 to 1500°C. The invention further provides a substrate onto which a metal film is applied, which metal film is obtainable by the process according to the invention, and a solar cell comprising such a substrate.
|
