| 摘要 |
A thermal protection device for an integrated power MOSFET transistor composed of interdigitated array of source regions and drain regions defined in a well region of the monocrystalline silicon substrate, and gate structures overhanging channel regions defined between adjacent source and drain regions, having a temperature sensor and a comparator for generating an overtemperature flag signal usable for turning off the overheated power transistor, is provided. The thermal protection device senses in a very accurate manner the temperature of the power MOS because it includes: means for forcing a fixed current through a small number of source regions of the interdigitated array separately connected from the other source region electrically connected in common of the power transistor; a comparator, integrated on the substrate outside the well region, comparing the source voltage present on the small number of separately connected source regions with a threshold voltage for producing on an output the overtemperature flag signal. |
