SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS

摘要

An semiconductor device (1) of the invention includes a semiconductor substrate provided with a channel region (21), a source region (22) and a drain region (23), a gate insulating film (3) laminated on the channel region (21), and a gate electrode (5). The gate insulating film (3) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm-1 is 0.02 or less when the gate insulating film (3) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.