发明名称 Pattern transfer in device fabrication
摘要 A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.
申请公布号 US7090967(B2) 申请公布日期 2006.08.15
申请号 US20020248232 申请日期 2002.12.30
申请人 INFINEON TECHNOLOGIES AG 发明人 LU ZHIJIAN;LIN CHIEH-YU
分类号 G03F7/26;G03F7/40;H01L21/027;H01L21/311;H01L21/3213 主分类号 G03F7/26
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