发明名称 |
Method of reducing STI divot formation during semiconductor device fabrication |
摘要 |
STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin nitride polish stop layer is retained in place during subsequent masking, implanting and cleaning steps to form dopant regions, and is removed prior to gate oxide and gate electrode formation.
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申请公布号 |
US7091106(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20040791759 |
申请日期 |
2004.03.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BONSER DOUGLAS J.;GROSCHOPF JOHANNES F.;DAKSHINA-MURTHY SRIKANTESWARA;PELLERIN JOHN G.;CHEEK JON D. |
分类号 |
H01L21/76;H01L21/3105;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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