发明名称 |
Method and apparatus for crystal analysis |
摘要 |
The method of measuring crystallographic orientations, crystal systems or the like of the surface of a specimen has steps of: irradiating the specimen with an ion beam; measuring the secondary electrons generated by the irradiation of the ion beam; repeating the irradiation of the ion beam and the measurement of the secondary electrons with each variation in an angle of incidence of the ion beam with respect to the specimen; and determining the crystalline state based on the variation in the amount of the secondary electrons corresponding to the variation of the angle of incidence.
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申请公布号 |
US7091484(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20040988086 |
申请日期 |
2004.11.12 |
申请人 |
TDK CORPORATION |
发明人 |
YANAGIUCHI KATSUAKI;OKAWA WAKAKO |
分类号 |
H01J37/252;G01N23/207;G01N23/225;H01J37/20;H01J37/22;H01J37/244;H01J37/256;H01J49/46 |
主分类号 |
H01J37/252 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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