发明名称 |
Semiconductor photodetection device |
摘要 |
A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.
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申请公布号 |
US7091527(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20050166247 |
申请日期 |
2005.06.27 |
申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
YONEDA YOSHIHIRO;HANAWA IKUO |
分类号 |
H01L31/10;H01L31/107;H01L29/732;H01L31/0216;H01L31/0224;H01L31/0232;H01L31/0304;H01L31/103;H01L31/109 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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