The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.
申请公布号
US7091573(B2)
申请公布日期
2006.08.15
申请号
US20030666228
申请日期
2003.09.18
申请人
INFINEON TECHNOLOGIES AG
发明人
HIRLER FRANZ;TIHANYI JENOE;HENNINGER RALF;KRUMREY JOACHIM;POELZL MARTIN;RIEGER WALTER
