发明名称 Capacitor electrode having an interface layer of different chemical composition formed on a bulk layer
摘要 An improved capacitor that is less susceptible to the depletion effect and methods for providing the same. The capacitor comprises a first and second electrode and an insulating layer interposed therebetween. The first electrode includes a bulk layer comprising n-doped polysilicon. The first electrode also includes an interface layer extending from a first surface of the bulk layer to the insulating layer. The interface layer is heavily doped with phosphorus so that the depletion region of the first electrode is confined substantially within the interface layer. The method of forming the interface layer comprises depositing a layer of hexamethldisilazane (HMDS) material over the first surface of the bulk layer so that HMDS molecules of the HMDS material chemically bond to the first surface of the bulk layer. The method further comprises annealing the layer of HMDS material in a phosphine ambient so as to replace CH<SUB>3 </SUB>methyl groups with PH<SUB>3 </SUB>molecules. The interface layer is then passivated in a nitrogen ambient having a reduced temperature so as to reduce the number of dangling silicon bonds of the lower electrode in a manner that results in reduced thermal damage to neighboring circuit elements.
申请公布号 US7092233(B2) 申请公布日期 2006.08.15
申请号 US20050216411 申请日期 2005.08.31
申请人 发明人
分类号 H01G4/005 主分类号 H01G4/005
代理机构 代理人
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